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2SK4101LS rev.0 i page 1 of 5 i www.onsemi.com features low on-resistance, low input capacitance, ultrahigh-speed switching. high reliability (adoption of hvp process). attachment workability is good by mica-less package. a valanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 650 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature 7 a i dpack *2 t c=25 c (sanyos ideal heat dissipation condition)*3 6.4 a drain current (pulse) i dp pw 10 s, duty cycle 1% 28 a allowable power dissipation p d 2.0 w t c=25 c (sanyos ideal heat dissipation condition)*3 35 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c a valanche energy (single pulse) *4 e as 289 mj a valanche current *5 i av 7a * 1 shows chip capability * 2 package limited * 3 sanyo s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =99v, l=10mh, i av =7a * 5 l 10mh, single pulse marking : k4101 ordering number : ena0745a 2SK4101LS n-channel silicon mosfet general-purpose switching device applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: 2SK4101LS/d
2SK4101LS rev.0 i page 2 of 5 i www.onsemi.com electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 650 v zero-gate voltage drain current i dss v ds =520v, v gs =0v 100 a gate-to-source leakage current i gss v gs = 30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 3 5 v forward transfer admittance ? yfs ? v ds =10v, i d =3.5a 2.3 4.6 s static drain-to-source on-state resistance r ds (on) i d =3.5a, v gs =10v 0.85 1.1 ? input capacitance ciss v ds =30v, f=1mhz 750 pf output capacitance coss v ds =30v, f=1mhz 136 pf reverse transfer capacitance crss v ds =30v, f=1mhz 28 pf t urn-on delay time t d (on) see specified test circuit. 21 ns rise time t r see specified test circuit. 40 ns t urn-off delay time t d (off) see specified test circuit. 89 ns fall time t f see specified test circuit. 31 ns t otal gate charge qg v ds =200v, v gs =10v, i d =7a 28.5 nc gate-to-source charge qgs v ds =200v, v gs =10v, i d =7a 5.2 nc gate-to-drain ?iller?charge qgd v ds =200v, v gs =10v, i d =7a 16 nc diode forward voltage v sd i s =7a, v gs =0v 0.9 1.2 v package dimensions unit : mm (typ) 7509-002 switching time test circuit avalanche resistance test circuit 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : gate 2 : drain 3 : source sanyo : to-220fi(ls) pw=10 s d.c. 0.5% p. g r gs =50 ? g s d i d =3.5a r l =57 ? v dd =200v v out 2SK4101LS v in 10v 0v v in 50 ? 50 ? rg v dd l 10v 0v 2SK4101LS
2SK4101LS rev.0 i page 3 of 5 i www.onsemi.com drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? case temperature, tc -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- tc i s -- v sd ? y fs ? -- i d drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it12219 it12216 - -50 --25 150 it12221 1.4 0.8 1.0 1.2 0.4 0.6 0.2 0.01 0.1 5 7 3 2 2 1.0 5 7 3 2 10 5 7 3 3 2 025507 5 100 125 i d = 3.5 a -- 25 c 25 c tc= 75 c tc= 75 c 25 c -- 25 c v gs =0v it12223 020 10 30 100 1000 5 2 3 10 2 3 5 2 3 5 7 7 f=1mhz 10 5152030 25 0 0 5 25 15 10 20 it12218 5.5 6.0 6.5 7.0 7.5 10 8.0 8.5 9.0 9.5 5.0 0 0.5 1.0 3.0 1.5 2.5 2.0 0 0.5 1.0 3.0 2.5 2.0 1.5 t c=25 c v gs =5v 10v 15v i d =3.5 a, v gs =10v 8v 50 40 ciss crss coss 0.1 1.0 23 2 57 23 57 3 10 100 10 7 5 3 2 7 3 5 2 it12222 t d (off) t d (on) v dd =200v v gs =10v t f t r 6v 25 c 75 c t c= -- 25 c it12217 6 4 2810 20 12 14 16 18 0 0 5 25 15 20 10 v ds =20v it12220 0.1 23 57 3 1.0 2 7 5 2 2 3 3 7 10 5 2 1.0 10 357 235 t c= - -25 c 25 c 75 c v ds =20v
2SK4101LS rev.0 i page 4 of 5 i www.onsemi.com t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w a s o v gs -- qg p d -- ta p d -- tc e as -- ta a valanche energy derating factor -- % ambient temperature, ta -- c 0 0 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 it12226 it12225 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 0.1 10 s 100 s 100ms 10ms 1ms dc operation 1.0 10 100 23 57 23 57 7 2 1000 35 2357 10 3 5 7 7 2 3 5 0 0 20 40 60 80 100 140 120 20 25 30 35 15 10 5 40 160 it12227 030 20 10 3 10 0 1 4 it12224 8 9 5 6 7 2 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10478 i dc (*1)=7a i dpack (*2)=6.4a v ds =200v i d =7 a operation in this area is limited by r ds (on). i dp =28a pw 10 s t c=25 c single pulse * 1. shows chip capability * 2. sanyo's ideal heat dissipation condition
2SK4101LS rev.0 i page 5 of 5 i www.onsemi.com 2SK4101LS/d

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